Description
| Specifications | Description |
| Substrate Material | Silicon (Si) |
| Diameter | 3 Inch (76.2 mm) |
| Thickness | 480 ±25 µm |
| Grade | Prime Grade |
| Orientation | <100> |
| Conductivity | N-Type (Phosphorous-doped) |
| Resistivity | 0.001-0.009 Ohm-cm (Ω-cm) |
| Surface | One side polished (SSP) |
| Packing | Packed with class 100 clean wafer case |
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