Silicon On Insulator (SOI) wafer

Silicon On Insulator (SOI) wafer

Silicon on insulator wafers are most common in micro-electromechanical systems (MEMS) and advanced complementary metal-oxide-semiconductor (CMOS) integrated circuit fabrication, and can improve many of the processes that more traditional silicon wafers are used in. These wafers provide a manufacturing solution which helps reduce power and heat while increasing the speed performance of a device. SOI wafers are a three layer material stack composed of the following: an active layer of prime quality silicon (device layer) over a buried oxide layer (box) of electrically insulating silicon dioxide (SiO2) over a bulk silicon support wafer (handle). SOI wafers are unique products for specific end-user applications.

Product Specifications:

  • Diameter :2’’/4’’/6’’
  • Thickness : 43 mm / 0.50 mm /1 mm
  • Orientation : <0001>=C-plane / <1120> =A-plane

   <1102> =R-plane & <1010>=M-plane

  • Surface :One side polished (SSP) /Double side polished (DSP)
  • Roughness : Ra ≤ 5 Å