Silicon On Insulator (SOI) wafer
Silicon on insulator wafers are most common in micro-electromechanical systems (MEMS) and advanced complementary metal-oxide-semiconductor (CMOS) integrated circuit fabrication, and can improve many of the processes that more traditional silicon wafers are used in. These wafers provide a manufacturing solution which helps reduce power and heat while increasing the speed performance of a device. SOI wafers are a three layer material stack composed of the following: an active layer of prime quality silicon (device layer) over a buried oxide layer (box) of electrically insulating silicon dioxide (SiO2) over a bulk silicon support wafer (handle). SOI wafers are unique products for specific end-user applications.
Product Specifications:
- Diameter :2’’/4’’/6’’
- Thickness : 43 mm / 0.50 mm /1 mm
- Orientation : <0001>=C-plane / <1120> =A-plane
<1102> =R-plane & <1010>=M-plane
- Surface :One side polished (SSP) /Double side polished (DSP)
- Roughness : Ra ≤ 5 Å