Description
| Specifications | Description |
| Diameter | 3 Inch (76.2 mm) |
| Grade | Prime Grade |
| Oxide Thickness | 300 nm (oxide layer on both side) |
| Tolerance | +/-5% |
| Substrate Material | Silicon (Si) |
| Substrate Orientation | <100> |
| Substrate Thickness | 525±25 µm |
| Si Conductivity | P-Type (Boron-doped) |
| Si Resistivity | 1-10 Ohm-cm (Ω-cm) |
| Surface | One side polished (SSP) |
| Packing | Packed with class 100 clean wafer case or bag in a class 1000 clean room |
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